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4DS’s New Smaller Than 45nm ReRAM

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4DS’s-New-Smaller-Than-45nm-ReRAM-300x129 4DS’s New Smaller Than 45nm ReRAMIn a path to replace 3D NAND Flash memory 4DS, the memory company has addressed the 40nm ReRAM as a milestone. ReRAM uses resistances to store bits with avoltage applied to switch between different resistances while the flash memory uses electrical charge. The ReRAM that 4DS has developed in partnership with HGST doesn’t use filaments and hence also avoids the physical limitations found in flash memory and also offer low power consumption said the company in a statement.


4DS director of Corporate Strategy and Investor Relations Mel Buffier said any ReRAM technology targeting gigabyte silicon storage required to be able to produce memory cells in sizes smaller than [45-50nm] 3D flash. While Buffier manages the Australian branch for corporate duties, the company has a team of five members working in the Silicon Valley. Due to apartnership with HGST and access to their team of memory specialists, they didn’t need an extensive development team. The company is willing to show the memory’s commercial viability next year. The most obvious commercialization of is to attract a strategic acquisition of our intellectual property or additional non-exclusive licensing deals as we are an emerging company said Buffier in a statement. Without sustaining the expense of fabricating fully operational,ReRAM Prototype 4DS is able to carry out demo and validation of memory technology while working under the expansion agreement with HGST, a Western Digital subsidiary HGST.